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| SHINDENGEN Schottky Rectifiers (SBD) Single D2FS4 40V 1.6A FEATURES *oe Small SMT *oe Tj150*Z *oe PRRSM avalanche guaranteed APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication OUTLINE DIMENSIONS Case : 2F Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 40 V Repetitive Peak Surge ReverseVRRSM Voltage Pulse width 0.5ms, duty 1/40 45 V Average Rectified Forward Current 50Hz sine wave, R-load Ta=34*Z*@On alumina1.6 IO substrateA 50Hz sine wave, R-load Ta=25*Z*@On glass-epoxy substrate 1.3 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125*Z 60 A Repetitive Peak Surge ReversePRRSM PowerPulse width 10Es, Tj=25*Z 330 W *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Ratings Forward Voltage VF IF =1.6A, Pulse measurement Max.0.55 Reverse Current IR V =V , R RM Pulse measurement Max.2.5 =10V Junction Capacitance Cj f=1MHz,RV Typ.150 AEjl junction to lead Max.24 Thermal Resistance AEja junction to ambient*@On alumina substrate Max.90 junction to ambient*@On glass-epoxy substrate Max.120 Unit V mA pF *Z/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D2FS4 Forward Voltage 10 Forward Current IF [A] Tl=150C [MAX] Tl=150C [TYP] Tl=25C [MAX] Tl=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] D2FS4 Junction Capacitance 1000 f=1MHz Tl=25C TYP per diode Junction Capacitance Cj [pF] 100 0.1 1 10 Reverse Voltage VR [V] D2FS4 1000 Reverse Current Tl=150C [MAX] 100 Tl=150C [TYP] Reverse Current IR [mA] Tl=125C [TYP] 10 Tl=100C [TYP] 1 Tl=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] D2FS4 5 Reverse Power Dissipation DC D=0.05 0.1 Reverse Power Dissipation PR [W] 4 0.2 0.3 3 0.5 2 SIN 1 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T D2FS4 1.6 1.4 Forward Power Dissipation Forward Power Dissipation PF [W] DC 1.2 0.5 1 0.2 0.8 0.05 0.6 0.4 0.2 0 0.1 SIN 0.3 D=0.8 0 0.5 1 1.5 2 2.5 3 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T D2FS4 3 Derating Curve Average Rectified Forward Current IO [A] 2.5 DC D=0.8 Alumina substrate Soldering land 2mm Conductor layer 20m Substrate thickness 0.64mm 2 0.5 SIN 1.5 0.3 0.2 0.1 0.5 0.05 0 0 20 40 60 80 100 120 140 160 1 Ambient Temperature Ta [C] VR = 20V IO 0 0 VR tp D=tp /T T D2FS4 2.5 Derating Curve Average Rectified Forward Current IO [A] 2 DC D=0.8 Glass-epoxy substrate Soldering land 2mm Conductor layer 35m 1.5 0.5 SIN 1 0.3 0.2 0.5 0.1 0 0.05 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 20V IO 0 0 VR tp D=tp /T T D2FS4 100 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 80 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=125C before surge current is applied 60 40 20 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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